2SC2314 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 27MHz CB Transceiver Driver Applications

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2314
DESCRIPTION
·Collector-Emitter Voltage-
:VCER= 75V(Min) ;RBE=150Ω
·Collector Current-
:IC=1.0A
·Low Saturation Voltage
: VCE(sat)=0.6V(MAX)@ I_C=0.5A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power Amplifier Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
75
V
VCER
Collector-Emitter Voltage RBE=150Ω
75
V
VCEO Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
1.0
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ Tc=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
1.5
A
5
W
150
℃
-55~150 ℃
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