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2SC2292 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2292
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)
·High Switching Speed
APPLICATIONS
·Power switching
·Power amplification
·Power driver
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IBB
Base Current-Continuous
IBM
Base Current-Peak
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
500
V
400
V
7
V
8
A
16
A
4
A
8
A
80
W
150
â
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.56 â/W
isc Websiteï¼www.iscsemi.cn
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