2SC2270 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL TYPE(PCT PROCESS)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2270
DESCRIPTION
·
·With TO-126 package
·Low collector saturation voltage
·High collector power dissipation
APPLICATIONS
·Strobo flash applications
·Medimum power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-peak
I_E
Emitter current (DC)
I_EM
Emitter current-peak
P_C
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25℃
T_C=25℃
VALUE
50
20
8
5
8
-5
-8
1.0
10
150
-55~150
UNIT
V
V
V
A
A
A
A
W
℃
℃