 English |
|
|
|
|
|
|
|
| 2SC2261 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2261
DESCRIPTION
·High Power Dissipation-
: PC= 80W(Max.)@TC=25â
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min.)
·Complement to Type 2SA981
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
180
V
VCEO Collector-Emitter Voltage
120
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature
3
A
80
W
150
â
-65~150 â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese