2SC2258 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2258
DESCRIPTION
With TO-126 package
High transition frequency f _T
High collector-emitter voltage V _CEO
APPLICATIONS
For high breakdown voltage general
amplification
For video output amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector- emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
Note :*1: Without heat sink
*2: With a 100 100 2 mm A1 heat sink
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
250
250
7
0.1
0.15
1.2*¹
4*²
150
-55+150
UNIT
V
V
V
A
A
W