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| 2SC2239 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2239
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO=160V(Min)
·Good Linearity of hFE
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
160
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
IE
Emitter Current- Continuous
Total Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
160
V
5
V
1.5
A
-1.5
A
25
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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