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| 2SC2233 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – NPN SILICON POWER TRANSISTOR(for TV horizontal deflection output applications) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2233
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
:VCEO= 60V(Min)
·DC Current Gain-
: hFE= 30(Min)@ (VCE= 5V, IC= 1A)
·High Collector Current
·High Collector Power Dissipation
APPLICATIONS
·TV Horizontal Deflection Output Application
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
60
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
10
A
IBB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
1
A
1.5
W
40
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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