2SC2189 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2189
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 100V (Min)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high speed switching and power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
V_CBO
Collector-Base Voltage
150
V
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
100
V
5
V
10
A
80
W
150
℃
-55~150 ℃
isc Website：www.iscsemi.cn