2SC2167 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2167
DESCRIPTION
·With TO-220 package
·High collector-emitter breakdown voltage
: V_CEO=150V(min)
APPLICATIONS
·Power amplifier applications
·TV vertical deflection applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation TC=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
150
150
6
2
3
30
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃