2SC2139 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2139
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 400V (Min)
·High Switching Speed
APPLICATIONS
·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
V_CBO
Collector-Base Voltage
500
V
V_CEO
Collector-Emitter Voltage
400
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
10
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
2
A
100
W
150
℃
-65~150 ℃
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