2SC2120 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)

INCHANGE Semiconductor
isc Silicon NPN Transistor
isc Product Specification
2SC2120
DESCRIPTION
·High hFE(1)=100-320
·1 Watts Amplifier Applications
·Complement to Type 2SA950
APPLICATIONS
·Audio power amplifier Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Curren
IB
Base Curren
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
VALUE
UNIT
35
V
30
V
5
V
800
mA
160
mA
600
mW
150
℃
-55~150
℃
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