2SC2098 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL PLANAR

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2098
DESCRIPTION
·Silicon NPN epitaxial planar
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·The 2SC2098 is designed for 25=50MHz AF power amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
70
V
VCEO Collector-Emitter Voltage
70
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
6
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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