2SC2028 Datasheet, PDF (1/2 Pages) Fujitsu Component Limited. – FUJITSU TRANSISTOR

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2028
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
·Good Linearity of hFE
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low-frequency power amplification
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
1.5
A
5
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}