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| 2SC1975 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Si NPN Epitaxial Planar | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC1975
DESCRIPTION
·Collector-Base Breakdown Voltage
: V(BR)CBO=160V(Min)
·Withstands worst overload conditions.
APPLICATIONS
·Design for used in transceiver power output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
120
V
VCER Collector-Emitter Voltage
90
V
VEBO Emitter-Base Voltage
5
V
ICM
Collector Current
Total Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
3
A
12
W
150
â
Tstg
Storage Temperature Range
-55~150 â
isc websiteï¼www.iscsemi.cn
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