|
2SC1970 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC1970
DESCRIPTION
·High Power Gain-
: Gpe⥠9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V
·High Reliability
APPLICATIONS
·Designed for RF power amplifiers on VHF band mobile radio
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage RBE= â
17
V
VEBO Emitter-Base Voltage
4
V
IC
Collector Current
Collector Power Dissipation
@TC=25â
PC
Collector Power Dissipation
@Ta=25â
Tj
Junction Temperature
0.6
A
5
W
1
150
â
Tstg
Storage Temperature Range
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a
Rth j-c
Thermal Resistance,Junction to Ambient
Thermal Resistance,Junction to Case
125 â/W
25 â/W
isc Websiteï¼www.iscsemi.cn
|
▷ |