2SC1969 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC1969
DESCRIPTION
·High Power Gain-
: G_pe≥12dB,f= 27MHz, P_O= 16W
·High Reliability
APPLICATIONS
·Designed for 10~14 watts output power class AB amplifiers
applications in HF band.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
60
V
V_CEO
Collector-Emitter Voltage R_BE= ∞
25
V
V_EBO Emitter-Base Voltage
5
V
I_C
Collector Current
Collector Power Dissipation
@T_C=25℃
P_C
Collector Power Dissipation
@T_a=25℃
T_j
Junction Temperature
6
A
20
W
1.7
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-a}
R_{th j-c}
Thermal Resistance,Junction to Ambient 73.5 ℃/W
Thermal Resistance,Junction to Case
6.25 ℃/W
isc Website：www.iscsemi.cn