2SC1953 Datasheet, PDF (1/4 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1953
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SA914
·High V_CEO
APPLICATIONS
·For low-frequency power pre-amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute Maximun Ratings (Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
VALUE
150
150
5
50
100
1.2
150
-55~150
UNIT
V
V
V
mA
mA
W
℃
℃