2SC1907 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial Planar

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC1907
DESCRIPTION
·Low Noise
·High Gain Bandwidth Product
APPLICATIONS
·Designed for VHF TV tuner and local oscillator applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
30
V
V_CEO Collector-Emitter Voltage
19
V
V_EBO Emitter-Base Voltage
2
V
I_C
Collector Current-Continuous
50
mA
I_E
Emitter Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-50
mA
0.3
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn