2SC1881K Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SC1881K
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 1.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.2V(Max)@ IC= 2.5A
APPLICATIONS
·Designed for High gain amplifier power switching
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
PC
Collector Power Dissipation
TC=25℃
30
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.com
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