2SC1815 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

INCHANGE Semiconductor
isc Silicon NPN Transistor
isc Product Specification
2SC1815
DESCRIPTION
·High Voltage and High Current
Vceo=50V(Min.），Ic=150mA(Max)
·Excellent hFE Linearity
·Low Noise
·Complement to Type 2SA1015(O,Y,GR class)
APPLICATIONS
·Audio frequency general purpose amplifier Applications
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Curren
IB
Base Curren
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
VALUE
UNIT
60
V
50
V
5
V
150
mA
50
mA
400
mW
125
℃
-55~125
℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}