2SC1730 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN RF Transistor

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC1730
DESCRIPTION
·Low Base Time Constant;
r_{bb’ • CC} = 10 ps TYP.
·High Gain Bandwidth Product
f_T= 1100 MHz TYP.
·Low Output Capacitance;
C_OB = 1.5 pF Max.
APPLICATIONS
·Designed for TV VHF, UHF tuner oscillator applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
30
V
V_CEO Collector-Emitter Voltage
15
V
V_EBO Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
50
mA
0.25
W
125
℃
-55~125
℃
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