2SC1728-220C3 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC1728
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 50V(Min)
·Low Saturation Voltage -
: VCE(sat)= 0.3V(Max)@ IC=1A, IB= 50mA
·High DC Current Gain-
: hFE= 98-649@ IC= 0.1A
APPLICATIONS
·Designed for audio frequency amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
ICM
Collector Current-Peak
1.5
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
0.5
A
0.95
W
7.9
150
℃
Tstg
Storage Temperature Range
-50~150 ℃
isc website：www.iscsemi.com
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