2SC1678 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL PLANAR TYPE

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1678
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
APPLICATIONS
·27MHz RF power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_B
Base current
I_E
Emitter current
P_C
Collector power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
65
65
4
3
0.4
-3
10
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃