2SC1667 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1667
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·For use in high power audio amplifier
applications and high voltage switching
regulator circuits
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=75℃
VALUE
90
90
7
4
50
175
-55~175
UNIT
V
V
V
A
W
℃
℃