2SC1626 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1626
DESCRIPTION
·With TO-220C package
·Complement to type 2SA816
APPLICATIONS
·Designed for the driver stages of 30-50W
high-fidelity amplifiers and medium speed
switching up to 2A peak current
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
·
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25℃
T_C=25℃
VALUE
80
80
5
750
2
1.5
10
150
-50~150
UNIT
V
V
V
mA
A
W
℃
℃