2SC1617 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NP TRIPLE DIFFUSED TYPE

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1617
DESCRIPTION
·With TO-3 package
·High voltage: V_CBO(min):300V
·Wide safe oprating area
APPLICATIONS
·For B/W white TV horizontal output
applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
·
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_E
Emitter current
P_C
Collector power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
300
100
5
7
-7
50
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃