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| 2SC1569 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC1569
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 300V(Min)
·DC Current Gain-
: hFE= 40-170 @IC= 50mA, VCE= 10V
·High Current-Gain Bandwidth Product
APPLICATIONS
·Designed for color TV chroma output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
300
V
VCEO Collector-Emitter Voltage
300
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
150
mA
IE
Emitter Current-Continuous
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-150
mA
1.5
W
12.5
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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