2SC1454 Datasheet, PDF (1/3 Pages) Wing Shing Computer Components – NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1454
DESCRIPTION
·With TO-3 package
·High breakdown voltage:V_CEO=250V(min)
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
300
250
7
4
50
150
-55~150
UNIT
V
V
V
A
W
℃
℃