2SC1450 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1450
DESCRIPTION
·With TO-66 package
·Wide area of safe operation
·High collector-emitter breakdown voltage
:V_CEO=150V(min)
·Complement to type 2SA766
APPLICATIONS
·For power amplifier and vertical output
applications.
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=80℃
VALUE
150
150
5
0.4
20
150
-65~200
UNIT
V
V
V
A
W
℃
℃