2SC1441 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1441
DESCRIPTION
·With TO-3 Package
·High voltage
·Wide area of safe operation
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
VEBO
IC
PC
TJ
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Junction Temperature
Tstg
Storage Temperature Range
200
V
200
V
5
V
15
A
150
W
-65~200
℃
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.17 ℃/W
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