2SC1173 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL TYPE(PCT PROCESS)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1173
DESCRIPTION
With TO-220 package
Complement to type 2SA473
Collector current :I _C=3A
Collector dissipation:P _C=10W@T_C=25
APPLICATIONS
Low frequency power amplifier
Power regulator
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
30
30
5
3
10
150
-55~150
UNIT
V
V
V
A
W