2SC1112 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1112
DESCRIPTION
·With TO-3 Package
·Wide area of safe operation
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For audio frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
VEBO
IC
PC
TJ
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Junction Temperature
Tstg
Storage Temperature Range
160
V
100
V
5
V
6
A
50
W
150
℃
-55~150
℃
isc website：www.iscsemi.com
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