2SC1024 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1024
DESCRIPTION
·DC Current Gain -hFE = 25(Min)@ IC= 1.0A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 50V(Min)
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
IC
ICM
IB
PC
TJ
Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
@ TC=25℃
Junction Temperature
Storage Temperature Range
5
V
3.0
A
5.0
A
1.0
A
25
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
5.0 ℃/W
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