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2SB995 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB995
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max)@ IC= -4A
·Complement to Type 2SD1355
APPLICATIONS
·Power amplifier applications.
·Recommended for 30W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
-0.5
A
40
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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