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2SB994 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB994
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
·Collector Power Dissipation-
: PC= 30W@ TC= 25â
·Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ IC= -3A
·Complement to Type 2SD1354
APPLICATIONS
·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25â
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
-0.5
A
1.5
W
30
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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