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| 2SB993 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon PNP Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB993
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min)
·Collector Power Dissipation-
: PC= 40W@ TC= 25â
·Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max)@ IC= -4A
·Complement to Type 2SD1363
APPLICATIONS
·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25â
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
-1
A
1.5
W
40
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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