2SB989 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Complement to Type 2SD1352

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB989
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -80V(Min)
·Collector Power Dissipation-
: P_C= 30W@ T_C= 25℃
·Low Collector Saturation Voltage-
: V_CE(sat)= -1.7V(Max)@ (I_C= -3A, I_B= -0.3A)
·Complement to Type 2SD1352
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-80
V
V_CEO
Collector-Emitter Voltage
-80
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-4
A
I_B
Base Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature
-0.4
A
30
W
150
℃
-55~150 ℃
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