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| 2SB979 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB979
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-8
A
60
W
3
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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