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| 2SB975 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB975
DESCRIPTION
·High DC Current Gain-
: hFE = 2000(Min)@ IC= -3A
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -3A
·Complement to Type 2SD1309
APPLICATIONS
·Designed for audio frequency power amplifier and low-speed
switching industrial use.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
-12
A
IBB
Base Current-DC
Collector Power Dissipation
TC=25â
PC
Collector Power Dissipation
Ta=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
-0.8
A
40
W
1.5
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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