2SB965 Datasheet, PDF (1/3 Pages) NEC – PNP Silicon Epitaxial/NPN Triple Diffused Transistor Audio Frequency Power Amplifier

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB965
DESCRIPTION
·
·With TO-3PFa package
·Complement to type 2SD1288
APPLICATIONS
·For use in low frequency and
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
-120
-120
-5
-7
70
150
-55~150
UNIT
V
V
V
A
W
℃
℃