2SB962-Z Datasheet, PDF (1/2 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR MP-3

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB962-Z
DESCRIPTION
·Low VCE(sat)=-0.3V TYP
·PNP silicon epitaxial transistor
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·The 2SB962-Z is designed for Audio frequency amplifier
and switching ,especially in hybrid integrated circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-40
V
VCEO Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3
A
ICP
Collector Current-Pulse
-6
A
PC
Total Power Dissipation
@ Ta=25℃
2.0
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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