2SB955 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon PNP Triple Diffused

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB955
DESCRIPTION
·High DC Current Gain-
: h_FE = 1000(Min)@ I_C= -5A
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO = -120V(Min)
·Low Collector-Emitter Saturation Voltage-
: V_CE(sat) = -1.5V(Max)@ I_C= -5A
·Complement to Type 2SD1126
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO
Collector-Base Voltage
-120
V
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CM
Collector Current-Peak
Collector Power Dissipation
P_C
T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
-120
V
-7
V
-10
A
-15
A
50
W
150
℃
-55~150 ℃
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