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| 2SB944 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power switching) | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB944
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@ IC= -3A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V (Min)
·Good Linearity of hFE
·Complement to Type 2SD1269
APPLICATIONS
·Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
-8
A
35
W
2
150
â
Tstg
Storage Temperature Range
-55~150
â
isc Websiteï¼www.iscsemi.cn
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