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2SB921 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB921
DESCRIPTION
·High Collector Current:: IC= -7A
·Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -4A
·Complement to Type 2SD1237
APPLICATIONS
·Designed for large current switching of relay drivers, high-
speed inverters, converters applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-80
V
VEBO Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
Total Power Dissipation
@ TC=25℃
PC
Total Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-12
A
40
W
1.75
150
℃
-55~150 ℃
isc Website:www.iscsemi.cn