2SB897 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – High DC Current Gain- : hFE = 1000(Min)@ IC= -10A

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB897
DESCRIPTION
·High DC Current Gain-
: h_FE = 1000(Min)@ I_C= -10A
·Low Collector Saturation Voltage-
: V_CE(sat) = -1.5V(Max.) @I_C= 10A
·Complement to Type 2SD1210
APPLICATIONS
·Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
-100
V
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CM
Collector Current-Peak
-100
V
-8
V
-10
A
-15
A
I_B
Base Current- Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
-0.5
A
80
W
150
℃
-55~150
℃
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