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| 2SB891 Datasheet, PDF (1/2 Pages) Rohm – LOW FREQ. POWER AMP. EPITAXIAL PLANAR PNP SILICON TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB891
DESCRIPTION
·High Collector Current -IC= -2A
·Good Linearity of hFE
·Low Collector Saturation Voltage
·Complement to Type 2SD1189
APPLICATIONS
·Designed for use in output stage of audio amplifier,
voltage regulator,DC-DC converter and relay driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-32
V
-5
V
-2
A
-3
A
10
W
1.2
150
â
-55~150
â
isc websiteï¼www.iscsemi.cn
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