2SB850 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – EPITAXIAL PLANER TYPE GENERAL PURPOSE POWER AMPLIFIER

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB850
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -40V(Min)
·Low Collector-Emitter Saturation Voltage-
: V_CE(sat)= -1.2V(Max) @I_C= -5A
·Wide Area of Safe Operation
·Complement to Type 2SD1117
APPLICATIONS
·Designed for audio amplifier, series regulators and general
purpose power amplifiers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_J
T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T_C=25℃
Junction Temperature
Storage Temperature Range
-40
V
-40
V
-7
V
-10
A
-2
A
50
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
2.5
℃/W
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