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2SB848 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistor | |||
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB848
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·Good Linearity of hFE
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Audio frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
ICP
Collector Current Pulse
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
-10
A
70
W
150
â
Tstg
Storage Temperature Range
-55~150 â
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