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2SB828 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 50V/12A Switching Applications
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB828
DESCRIPTION
·High Collector Current:: IC= -12A
·Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -6A
·Wide Area of Safe Operation
·Complement to Type 2SD1064
APPLICATIONS
·Designed for relay drivers,high-speed inverters,converters,
and other gereral high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-50
V
VEBO Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-12
A
ICM
Collector Current-Peak
Total Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-17
A
80
W
150
℃
-55~150
℃
isc Website:www.iscsemi.cn