2SB823 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB823
DESCRIPTION
·Collector-Emitter Breakdown Voltage
V(BR)CEO = -100V(Min)
·Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -6A
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifer and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
CBO
Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-10
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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